(China (Mainland))
Product Summary
The BLF861A is a Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The common source is connected to the mounting flange. The applications of the BLF861A include Communication transmitter applications in the UHF frequency range.
Parametrics
BLF861A absolute maximum ratings: (1)drain-source voltage: 65 V; (2)gate-source voltage: ±15 V; (3)drain current (DC): 18 A; (4)total power dissipation: 318 W at Tmb ≤ 25 ℃; (5)storage temperature: -65 +150 ℃; (6)junction temperature: 200 ℃.
Features
BLF861A features: (1)High power gain; (2)Easy power control; (3)Excellent ruggedness; (4)Designed to withstand abrupt load mismatch errors; (5)Source on underside eliminates DC isolators; reducing common mode inductance; (6)Designed for broadband operation (UHF band); (7)Internal input and output matching for high gain and optimum broadband operation.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BLF861A |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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BLF861A,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 150W UHF |
Data Sheet |
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