Product Summary

The BLF871 is an 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of BLF871 makes it ideal for digital transmitter applications.

Parametrics

BLF871 absolute maximum ratings: (1)drain-source voltage: 89 V; (2)gate-source voltage: -0.5 to +13 V; (3)storage temperature: -65 to +150 ℃; (4)junction temperature: 200 ℃.

Features

BLF871 features: (1)2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W, Power gain = 21 dB, Drain efficiency = 47 %, Third order intermodulation distortion = -35 dBc; (2)DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Average output power = 24 W, Power gain = 22 dB, Drain efficiency = 33 %, Third order intermodulation distortion = -34 dBc (4.3 MHz from center frequency).

Diagrams

BLF871 Graphic symbol diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF871
BLF871
NXP Semiconductors
Transistors RF MOSFET Power 100W, HF-1GHz
Data Sheet
Negotiable 
BLF871,112
BLF871,112
NXP Semiconductors
Transistors RF MOSFET Power Trans MOSFET N-CH 89V 3-Pin
Data Sheet
0-1: $77.47
1-25: $69.85
25-100: $67.57
BLF871S,112
BLF871S,112
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR RF PWR LDMOS
Data Sheet
0-38: $81.29