Product Summary

The FLL300IL-2 is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make FLL300IL-2 ideally suited for base station applications.

Parametrics

FLL300IL-2 absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 100 W at TC=25 ℃; (4)Storage Temperature: -65 to +175℃; (5)Channel Temperature: 175 ℃.

Features

FLL300IL-2 features: (1)High Output Power: P1dB=44.5dBm (Typ.); (2)High Gain: G1dB=12.0dB (Typ.); (3)High PAE: ηdd=44% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.

Diagrams

FLL300IL-2 diagram