(China (Mainland))
Product Summary
The FLM8596-4F is a Ku-band internally matched FET. The FLM8596-4F power GaAs FET is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudynas stringent Quality Assurance Program assures the highest reliability and consistent performance.
Parametrics
FLM8596-4F absolute maximum ratings: (1)Drain-Source Voltage VDS: 15V; (2)Gate-Source Voltage VGS: -5V; (3)Total Power Dissipation PT: 25.0W; (4)Storage Temperature Tstg: -65 to +175℃; (5)Channel Temperature Tch: 175℃.
Features
FLM8596-4F features: (1)High Output Power: P1dB = 36.0dBm (Typ.); (2)High Gain: G1dB = 7.5dB (Typ.); (3)High PAE: ndd = 29% (Typ.); (4)Low IM3 = -45dBc@Po = 25.5dBm; (5)Broad Band: 8.5 ~ 9.6GHz; (6)Impedance Matched Zin/Zout = 50
Ω; (7)Hermetically Sealed.
Diagrams
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 FLM8596-4F |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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FLM8596-12F |
Other |
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Data Sheet |
Negotiable |
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FLM8596-15F |
Other |
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Data Sheet |
Negotiable |
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FLM8596-4F |
Other |
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Data Sheet |
Negotiable |
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FLM8596-8F |
Other |
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Data Sheet |
Negotiable |
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