(China (Mainland))
Product Summary
The MRF150 is designed primarily for linear large-signal output stages up to 150 MHz.
Parametrics
MRF150 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 125 Vdc; (2)Drain–Gate Voltage VDGO: 125 Vdc; (3)Gate–Source Voltage VGS: ±40 Vdc; (4)Drain Current Continuous ID: 16 Adc; (5)Total Device Dissipation @ TC = 25℃, PD 300 Watts, Derate above 25℃, 1.71W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃; (7)Operating Junction Temperature TJ: 200 ℃.
Features
MRF150 features: (1)Superior high order IMD; (2)Specified 50V, 30MHz characteristics. Output power = 150 Watts. Power gain = 17 dB (Typ.); (3)Efficiency = 45% (Typ.); (4)100% tested for load mismatch at all phase angles.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF150 |
M/A-COM Technology Solutions |
Transistors RF MOSFET Power 5-150MHz 150Watts 50Volt Gain 17dB |
Data Sheet |
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MRF1500 |
Other |
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Data Sheet |
Negotiable |
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MRF15030 |
Other |
|
Data Sheet |
Negotiable |
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MRF15060 |
Other |
|
Data Sheet |
Negotiable |
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MRF15060S |
Other |
|
Data Sheet |
Negotiable |
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MRF1507 |
Other |
|
Data Sheet |
Negotiable |
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MRF1507T1 |
Other |
|
Data Sheet |
Negotiable |
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MRF15090 |
Other |
|
Data Sheet |
Negotiable |
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