Product Summary
The BLF645 is an 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. The applications of the BLF645 include Communication transmitter applications in the HF to 1400 MHz frequency range, Industrial applications in the HF to 1400 MHz frequency range.
Parametrics
BLF645 absolute maximum ratings: (1)drain-source voltage: 65 V; (2)gate-source voltage: -0.5 to +11 V; (3)drain current: 32 A; (4)storage temperature: -65 to +150 ℃; (5)junction temperature: 200 ℃.
Features
BLF645 features: (1)CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Average output power = 100 W, Power gain = 18 dB, Drain efficiency = 56 %; (2)2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.9 A for total device: Peak envelope load power = 100 W, Power gain = 18 dB, Drain efficiency = 45 %, Intermodulation distortion = -32 dBc.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BLF645,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR PWR LDMOS |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||
BLF642,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TRANSISTOR |
Data Sheet |
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BLF645,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANSISTOR PWR LDMOS |
Data Sheet |
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BLF647 |
Other |
Data Sheet |
Negotiable |
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BLF647,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 150W UHF |
Data Sheet |
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BLF647A |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF647A,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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