(China (Mainland))
Product Summary
The FHX35LG is a HEMT (High Electron Mobility Transistor) which is suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This FHX35LG combines high transconductance, low gate capacitance and low leakage current; all important factors in achieving low noise preamplification. Fujitsu’s stringent Quality Assurance criteria and detailed Test Procedures assure Highest Reliabiltity Performance.
Parametrics
FHX35LG absolute maximum ratings: (1)Drain-Source Voltage: 6 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 290 mW; (4)Storage Temperature: -65 to +175 ℃; (5)Channel Temperature: 175 ℃.
Features
FHX35LG features: (1)High Transconductance; (2)Low Leakage Current; (3)Low Gate Capacitance; (4)Gold Bonding System; (5)Proven Reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 FHX35LG/002 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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FHX35LG/002 |
Other |
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Data Sheet |
Negotiable |
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FHX35X/002 |
Other |
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Data Sheet |
Negotiable |
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