(China (Mainland))
Product Summary
The BLF881 is a 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. The applications of the BLF881 include Communication transmitter applications in the UHF band, Industrial applications in the UHF band.
Parametrics
BLF881 absolute maximum ratings: (1)drain-source voltage: 104 V; (2)gate-source voltage: -0.5 to +13 V; (3)storage temperature: -65 to +150 ℃; (4)junction temperature: 200 ℃.
Features
BLF881 features: (1)2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 140 W, Power gain = 21 dB, Drain efficiency = 49 %, Third order intermodulation distortion = -34 dBc; (2)DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Average output power = 33 W, Power gain = 21 dB, Drain efficiency = 34 %, Shoulder distance = .33 dBc (4.3 MHz from center frequency); (3)Integrated ESD protection; (4)Excellent ruggedness; (5)High power gain.
Diagrams
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 BLF881,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF power LDMOS transistor |
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BLF881S,112 |
NXP Semiconductors |
Transistors RF MOSFET Power UHF power LDMOS transistor |
Data Sheet |
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