(China (Mainland))
Product Summary
The FLM7785-6F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Parametrics
FLM7785-6F absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 31.2 W; (4)Storage Temperature: -65 to +175 ℃; (5)Channel Temperature: 175 ℃.
Features
FLM7785-6F features: (1)High Output Power: P1dB=38.5dBm(Typ.); (2)High Gain: G1dB=8.5dB(Typ.); (3)High PAE: ηadd=31%(Typ.); (4)Broad Band: 7.7~8.5GHz; (5)Impedance Matched Zin/Zout = 50Ω; (6)Hermetically Sealed.
Diagrams
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 FLM7785-6F |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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FLM7179-18F |
Other |
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Negotiable |
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FLM7785-12F |
Other |
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Data Sheet |
Negotiable |
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FLM7785-4F |
Other |
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Data Sheet |
Negotiable |
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FLM7785-6F |
Other |
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Data Sheet |
Negotiable |
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