(China (Mainland))
Product Summary
The MRFE6S9060NR1 is a RF Power Field Effect Transistor designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of the MRFE6S9060NR1 makes it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
Parametrics
MRFE6S9060NR1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: - 0.5, +66 Vdc; (2)Gate-Source Voltage VGS: - 0.5, +12 Vdc; (3)Maximum Operation Voltage VDD: 32, +0 Vdc; (4)Storage Temperature Range Tstg: - 65 to +150℃; (5)Case Operating Temperature TC: 150℃; (6)Operating Junction Temperature, TJ: 225℃.
Features
MRFE6S9060NR1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Integrated ESD Protection; (3)225℃ Capable Plastic Package; (4)RoHS Compliant; (5)In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRFE6S9060NR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 60W TO270-2N FET |
Data Sheet |
|
|
||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||
 |
MRFE6P3300HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML |
Data Sheet |
|
|
||||||||
|
MRFE6P3300HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 900MHZ 300W NI860ML |
Data Sheet |
Negotiable |
|
||||||||
|
MRFE6P9220HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML |
Data Sheet |
|
|
||||||||
|
MRFE6P9220HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 900MHZ 200W NI860ML |
Data Sheet |
Negotiable |
|
||||||||
|
MRFE6S8046GNR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 45W GSM |
Data Sheet |
|
|
||||||||
|
MRFE6S8046NR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6E 45W GSM |
Data Sheet |
|
|
||||||||
