Product Summary
The BLF6G27-45 is a 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Parametrics
BLF6G27-45 absolute maximum ratings: (1)drain-source voltage: 65 V; (2)gate-source voltage: -0.5 to +13 V; (3)drain current: 20 A; (4)storage temperature: -65 to +150 ℃; (5)junction temperature: 200 ℃.
Features
BLF6G27-45 features: (1)Qualified up to a maximum VDS operation of 32 V; (2)Integrated ESD protection; (3)Excellent ruggedness; (4)High efficiency; (5)Excellent thermal stability; (6)Designed for broadband operation; (7)Internally matched for ease of use; (8)Low gold plating thickness on leads; (9)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BLF6G27-45 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF6G27-45,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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BLF6G27-45,135 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANS WIMAX PWR LDMOS |
Data Sheet |
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