(China (Mainland))
Product Summary
The RA30H4047M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios. The RA30H4047M operates in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. The RA30H4047M output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module RA30H4047M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
Parametrics
RA30H4047M absolute maximum ratings: (1)VDD, Drain Voltage: 17 V when VGG<5V; (2)VGG, Gate Voltage: 6 V when VDD<12.5V, Pin=0mW; (3)Pin, Input Power: 100 mW; (4)Pout, Output Power: 45 W; (5)Tcase(OP), Operation Case Temperature Range: -30 to +110℃ when f=400-470MHz, ZG=ZL=50℃; (6)Tstg, Storage Temperature Range: -40 to +110℃.
Features
RA30H4047M features: (1)Enhancement- Mode MOSFET Transistors (IDD=0 @ VDD=12.5V, VGG=0V); (2)Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW; (3)Broadband Frequency Range: 400-470MHz; (4)Low-Power Control Current IGG=1mA (typ) at VGG=5V; (5)Module Size: 66 x 21 x 9.88 mm; (6)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
Diagrams
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 RA30H4047M |
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Negotiable |
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RA30H4047M1 |
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