(China (Mainland))
Product Summary
The BLF242 is a Silicon N-channel enhancement mode vertical D-MOS transistor designed for professional transmitter applications in the HF/VHF frequency range. The transistor BLF242 is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange.
Parametrics
BLF242 absolute maximum ratings: (1)VDS, drain-source voltage: 65 V; (2)±VGS, gate-source voltage: 20 V; (3)ID, DC drain current: 1A; (4)Ptot, total power dissipation up to Tmb = 25℃: 16 W; (5)Tstg, storage temperature: -65 to 150℃; (6)Tj, junction temperature: 200℃.
Features
BLF242 features: (1)High power gain; (2)Low noise; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch; (6)Gold metallization ensures excellent reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLF242 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
BLF242,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 5W HF-VHF |
Data Sheet |
|
|
||||||||||||
 |
BLF2425M6L180P,112 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.4-2.5GHz 65V 12dB |
Data Sheet |
|
|
||||||||||||
|
BLF2425M6L180P,118 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.4-2.5GHz 65V 12dB |
Data Sheet |
|
|
||||||||||||
 |
BLF2425M6LS180P,11 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.4-2.5GHz 65V 12dB |
Data Sheet |
|
|
||||||||||||
 |
BLF2425M7L140,112 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.45GHz 65V 17.5dB |
Data Sheet |
|
|
||||||||||||
|
BLF2425M7L140,118 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.45GHz 65V 17.5dB |
Data Sheet |
|
|
||||||||||||
|
BLF2425M7L250P,112 |
NXP Semiconductors |
Transistors RF MOSFET Power 2.4-2.5GHz 65V 12dB |
Data Sheet |
|
|
||||||||||||
