(China (Mainland))
Product Summary
The BLF244 is a Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor BLF244 is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.
Parametrics
BLF244 absolute maximum ratings: (1)VDS, drain-source voltage: 65 V; (2)±VGS, gate-source voltage: 20 V; (3)ID, DC drain current: 3A; (4)Ptot, total power dissipation up to Tmb = 25℃: 38 W; (5)Tstg, storage temperature: -65 to 150℃; (6)Tj, junction temperature: 200℃.
Features
BLF244 features: (1)High power gain; (2)Low noise figure; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch; (6)Gold metallization ensures excellent reliability.
Diagrams
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 BLF244 |
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Negotiable |
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BLF244,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 15W VHF |
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