Product Summary

The BLF278 is a dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor. It encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps. The mounting flange of the BLF278 provides the common source connection for the transistors.

Parametrics

BLF278 absolute maximum system: (1)VDS drain-source voltage - 110 V; (2)VGS gate-source voltage - ±20 V; (3)ID drain current (DC) - 18 A; (4)Tstg storage temperature -65 150 ℃; (5)Tj junction temperature - 200 ℃.

Features

BLF278 features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability.

Diagrams

BLF278 outline

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF278
BLF278
Advanced Semiconductor, Inc.
Transistors RF MOSFET Power RF Transistor
Data Sheet
0-5: $96.59
5-10: $93.00
10-25: $88.59
25-50: $87.60
BLF278,112
BLF278,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 250W VHF
Data Sheet
0-1: $96.59
1-25: $88.59
BLF278/01,112
BLF278/01,112
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR VHF PWR LDMOS
Data Sheet
0-42: $96.54