(China (Mainland))
Product Summary
The BLF878 is an 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of BLF878 makes it ideal for digital transmitter applications.
Parametrics
BLF878 absolute maximum ratings: (1)drain-source voltage: 89 V; (2)gate-source voltage: -0.5 to +13 V; (3)storage temperature: -65 to +150 ℃; (4)junction temperature: - 200 ℃.
Features
BLF878 features: (1)2-tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: Peak envelope power load power = 300 W, Power gain = 21 dB, Drain efficiency = 46 %, Third order intermodulation distortion = -35 dBc; (2)DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: Average output power = 75 W, Power gain = 21 dB, Drain efficiency = 32 %, Third order intermodulation distortion = -32 dBc (4.3 MHz from center frequency).
Diagrams
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Pricing (USD) |
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 BLF878 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF878,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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