(China (Mainland))
Product Summary
The FLC257MH-8 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.
Parametrics
FLC257MH-8 absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 7.5 W; (4)Storage Temperature: -65 to +175 ℃; (5)Channel Temperature: 175 ℃.
Features
FLC257MH-8 features: (1)High Output Power: P1dB = 34.0dBm(Typ.); (2)High Gain: G1dB = 8.0dB(Typ.); (3)High PAE: ηdd = 35%(Typ.); (4)Proven Reliability; (5)Hermetic Metal/Ceramic Package.
Diagrams
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 FLC257MH-8 |
Other |
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Data Sheet |
Negotiable |
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FLC21 |
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FLC22 |
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FLC257MH-6 |
Other |
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Data Sheet |
Negotiable |
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FLC257MH-8 |
Other |
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Data Sheet |
Negotiable |
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