Product Summary
The HMC-AUH317 is a high dynamic range, three stage GaAs HEMT MMIC Medium Power Amplifier which operates between 81 and 86 GHz. The HMC-AUH317 provides 22 dB of gain, and an output power of +17.5 dBm at 1 dB compression from a +4V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The applications of the HMC-AUH317 are Short Haul / High Capacity Links, Wireless LAN Bridges, Military & Space, E-Band Communication Systems.
Parametrics
HMC-AUH317 absolute maximum ratings: (1)Drain Bias Voltage:+4.5V; (2)Gate Bias Voltage:-0.8 to +0.3V; (3)RF Input:3 dBm; (4)Thermal Resistance(Channel to die bottom):111℃/W; (5)Channel Temperature:180℃; (6)Storage Temperature:-65℃ to +150℃; (7)Operating Temperature:-55℃ to +85℃; (8)Drain Bias Current (Idd1):100 mA; (9)Drain Bias Current (Idd2):100 mA.
Features
HMC-AUH317 features: (1)Gain: 22 dB; (2)P1dB: +17.5 dBm ; (3)Supply Voltage: +4V; (4)50 Ohm Matched Input/Output; (5)Die Size: 2.65 x 1.6 x 0.05 mm.
Diagrams
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