(China (Mainland))
Product Summary
The MRF377H is a RF Power Field-Effect Transistor, which is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of MRF377H make it ideal for large-signal, common source amplifier applications in 32 volt digital television transmitter equipment.
Parametrics
MRF377H absolute maximum ratings: (1)drain-source voltage: -0.5 to +65 V; (2)gate-source voltage: -0.5 to +65 V; (3)drain current-continous: 17 A; (4)total device dissipation @ Tc=25℃: 648 W, derate above 25℃: 3.7 W/℃; (5)storage temperature range: -65 to +150 ℃; (6)operating junction temperature: 200 ℃.
Features
MRF377H features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Device Designed for Push-Pull Operation Only; (4)Integrated ESD Protection; (5)Excellent Thermal Stability; (6)Lower Thermal Resistance Package; (7)Low Gold Plating Thickness on Leads, 40μ Nominal; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 MRF377H |
Other |
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Data Sheet |
Negotiable |
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MRF377HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power 250W 860MHZ 32V |
Data Sheet |
Negotiable |
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MRF377HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power 250W 860MHZ 32V |
Data Sheet |
Negotiable |
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