(China (Mainland))
Product Summary
The FHC40LG is a Super High Electron Mobility Transistor (SuperHEMTTM) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-12GHz frequency range. The FHC40LG is packaged in a cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, DBS, TVRO, VSAT or other low noise applications.
Parametrics
FHC40LG absolute maximum ratings: (1)Drain-Source Voltage: 3.5 V; (2)Gate-Source Voltage: -3.0 V; (3)Total Power Dissipation: 290 mW; (4)Storage Temperature: -65 to +175 ℃; (5)Channel Temperature: 175 ℃.
Features
FHC40LG features: (1)Low Noise Figure: 0.3dB (Typ.)@f=4GHz; (2)High Associated Gain: 15.5dB (Typ.)@f=4GHz; (3)Lg ≤ 0.15μm, Wg = 280μm; (4)Gold Gate Metallization for High Reliability; (5)Cost Effective Ceramic Microstrip (SMT) Package; (6)Tape and Reel Available.
Diagrams
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| Image | Part No | Mfg | Description | |
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FHC40LG |
Other |
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Data Sheet |
Negotiable |
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