(China (Mainland))
Product Summary
The FLL177ME is a L-band medium & high power gaas fet. The FLL177ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. The FLL177ME is assembled in hermetic metal/ceramic package.
Parametrics
FLL177ME absolute maximum ratings: (1)Drain-Source Voltage, VDS: 15V; (2)Gate-Source Voltage, VGS: -5V; (3)Total Power Dissipation, Pt: 7.5W; (4)Storage Temperature, Tstg: -65 to +175℃; (5)Channel Temperature, Tch: 175℃.
Features
FLL177ME features: (1)High Output Power: P1dB=32.5dBm (Typ.); (2)High Gain: G1dB=12.5dB (Typ.); (3)High PAE: ndd=46% (Typ.); (4)Proven Reliability; (5)Hermetically Sealed Package.
Diagrams
 |
 FLL1200IU-2 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
FLL1200IU-3 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
FLL1500IU-2C |
Other |
|
Data Sheet |
Negotiable |
|
||||
