(China (Mainland))
Product Summary
The FLM1314-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
Parametrics
FLM1314-18F absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate -Source Voltage: -5 V; (3)Total Powe r Dissipation: 75 W; (4)Storage Temperature: -65 to +150 ℃; (5)Channel Tempe rature: 175 ℃.
Features
FLM1314-18F features: (1)High Output Power: P1dB=42.5dBm(Typ.); (2)High Gain: G1dB=6.0dB(Typ.); (3)High PAE: ηadd=27%(Typ.); (4)Broad Band: 13.75~14.5GHz; (5)Impedance Matched Zin/Zout = 50Ω; (6)Hermetically Sealed Package.
Diagrams
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Data Sheet |
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