Product Summary

The MA4E1317 is a GaAs flip chip schottky barrier diode. The MA4E1317 single, MA4E1318 antiparallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. The MA4E1317 is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.

Parametrics

MA4E1317 absolute maximum ratings: (1)Operating Temperature: -65 to +125℃; (2)Storage Temperature: -65 to +150℃; (3)Incident LO Power: +20 dBm; (4)Incident RF Power: +20 dBm; (5)Mounting Temperature： +235℃ for 10 seconds.

Features

MA4E1317 features: (1)Low Series Resistance; (2)Low Capacitance; (3)High Cutoff Frequency; (4)Silicon Nitride Passivation; (5)Polyimide Scratch Protection; (6)Designed for Easy Circuit Insertion.

Diagrams

MA4E1317 Flip Chip Outline Drawings

MA4E1318
MA4E1318
M/A-COM Technology Solutions
Schottky (Diodes & Rectifiers) DC-80GHz Cap .09pF Junc. Cap .09pF
Data Sheet
0-100: $1.46
100-200: $1.43
200-300: $1.41
300-400: $1.36
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