Product Summary
The FLM8596-15F is a X-band internally matched FET. The FLM8596-15F power GaAs FET is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
Parametrics
FLM8596-15F absolute maximum ratings: (1)Drain-Source Voltage, VDS: 15V; (2)Gate-Source Voltage, VGS: -5V; (3)Total Power Dissipation, PT: 57.7V; (4)Storage Temperature, Tstg: -65 to +175℃; (5)Channel Temperature, Tch: 175℃.
Features
FLM8596-15F features: (1)High Output Power: P1dB=42.0dBm(Typ.); (2)High Gain: G1dB=7.5dB(Typ.); (3)High PAE: nadd=32%(Typ.); (4)Broad Band: 8.5~9.6GHz; (5)Impedance Matched Zin/Zout = 50Ω; (6)Hermetically Sealed Package.
Diagrams

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![]() FLM8596-4F |
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![]() FLM8596-8F |
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(China (Mainland))









